ALLNET BrickRknowledge p-MOS SPD18P06P MOSFET di potenza a canale P -60V 18A DPAK

The ALLNET BrickRknowledge p-MOS SPD18P06P is a high-performance P-Channel Power MOSFET designed for efficient power management and switching applications. Manufactured by Infineon Technologies, this component features a drain-source voltage of -60 V and a continuous drain current of -18 A, making it suitable for a wide range of electronic circuits. Housed in a DPAK (TO-252) surface-mount package, it offers reliable performance in compact designs.

Advantages

This MOSFET provides low on-state resistance (65 mΩ at Vgs=-10V) for reduced power losses, high switching speed, and robust thermal performance with a power dissipation of 60 W. Its SIPMOS® technology ensures excellent efficiency and durability in demanding environments.

Suitable for

• Power supply circuits
• DC-DC converters
• Motor control
• Battery management systems
• Load switching

Key specifications

• Component Type: P-Channel Power MOSFET
• Drain-Source Voltage (Vds): -60 V
• Continuous Drain Current (Id): -18 A (at Tc=25°C)
• On-State Resistance (Rds(on)): 65 mΩ (at Vgs=-10V, Id=-14A)
• Gate-Source Voltage (Vgs): ±20 V
• Power Dissipation (Pd): 60 W (at Tc=25°C)
• Package Type: DPAK (TO-252)
• Mounting Type: Surface Mount
• Operating Temperature Range: -55 to 175 °C
• Total Gate Charge (Qg): 25 nC (typical)
• Gate Threshold Voltage (Vgs(th)): -2.1 V (min)
• Input Capacitance (Ciss): 1000 pF (typical)
• Output Capacitance (Coss): 200 pF (typical)
• Reverse Transfer Capacitance (Crss): 100 pF (typical)
• Number of Pins: 3
• Transistor Polarity: P-Channel
• Technology: SIPMOS®

Recommendations

For optimal performance, ensure proper heat sinking and follow the manufacturer's guidelines for gate drive and PCB layout. This component is ideal for engineers and hobbyists seeking a reliable P-Channel MOSFET for medium-power applications.