RDIMM Samsung DDR4 16GB 2666MHz ECC Registered 1.2V per PC/server

The Samsung M393A2K43CB2-CTD is a 16GB DDR4 RDIMM memory module running at 2666 MHz with ECC support. Designed for use in PCs and servers, this module provides error-correcting capabilities to help maintain data integrity and system stability while operating at a standard DDR4 voltage of 1.2V. Its single-module layout makes installation and capacity upgrades straightforward.

Advantages

ECC technology corrects single-bit memory errors, improving reliability in server and workstation environments. The 2666 MHz clock speed balances performance and compatibility across a wide range of systems. As an RDIMM module from Samsung, it is engineered for stable operation under continuous workloads and supports standard DDR4 voltage for energy-efficient performance.

Suitable for

• Servers and data centers requiring error correction and stability
• Workstations used for professional applications and multitasking
• System memory upgrades where RDIMM form factor is supported
• Environments prioritizing data integrity and continuous operation

Key specifications

• Manufacturer: Samsung
• Model / MPN: M393A2K43CB2-CTD
• Capacity: 16 GB
• Type: DDR4 RDIMM
• Speed: 2666 MHz
• Features: ECC (error-correcting code)
• Voltage: 1.2 V

How to use

Power down the system and disconnect it from the mains before installing the module. Open the server or PC chassis according to the manufacturer’s instructions, locate the compatible RDIMM memory slot, and insert the module firmly until the retention clips engage. After installation, reconnect power and enable any necessary memory settings in the system BIOS/UEFI to ensure ECC is active. Verify memory is recognized by the operating system or system firmware.

Recommendations

Use this RDIMM module in systems that explicitly support DDR4 RDIMM and ECC. For best results, match capacity, speed, and ECC support across modules when populating multiple slots; consult your server or motherboard documentation for supported configurations and maximum memory capacity.